Light-induced metastable changes in amorphous silicon nitride
Author:
Affiliation:
1. a The James Franck Institute, University of Chicago , Chicago , Illinois , 60637 , USA
2. b Department of Physics and Electronics , University of Osaka Prefecture , 1-1 Gakuen-cho, Sakai , Osaka , 593 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639408240115
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1. A Monte Carlo investigation of the nearest-available-neighbour distribution in three dimensions A model for electron-hole recombination in semiconductors
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3. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects
4. Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films
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