The effects of linear strain on the electronic properties of glow discharge amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference5 articles.
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1. Defects genesis in a-Si: H p-i-n solar cells;Physica Scripta;1997-06-01
2. Temperature dependent space‐charge‐limited currents in amorphous and disordered semiconductors;Journal of Applied Physics;1996-07-15
3. A use of the meyer-neldel rule for an evaluation of SCLC;Physica Status Solidi (a);1991-09-16
4. Substitutional and interstitial doping of amorphous silicon nitride;Philosophical Magazine B;1988-04
5. Influence of plasma excitation frequency fora-Si:H thin film deposition;Plasma Chemistry and Plasma Processing;1987-09
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