Hydrogenated amorphous silicon‐nitrogen alloys,a‐SiNx:Hy: a wide band gap material for optoelectronic devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360961
Reference38 articles.
1. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique
2. Amorphous Si/SiC three‐color detector with adjustable threshold
3. A hydrogenated amorphous Si/SiC heterojunction phototransistor
4. Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
5. Structural properties of a-SiC:H- and a-SiN:H-Alloys from XPS-analyses and IR-absorption
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