Observation of a multiply charged defect in p-type CdTe-Reference-Cited by-同舟云学术

Observation of a multiply charged defect in p-type CdTe

Published:1988-12 Issue:6 Volume:58 Page:623-633
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Zoth G.¹²,Schröter W.¹

Affiliation:

1. a IV. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich , 126 Göttingen/Clausthal, Bunsenstr. 11–15, D 3400 , Göttingen , F.R. Germany

2. b Siemens AG, Mikroelektronik-Technologiezentrum , Otto-Hahn-Ring 6, D 8000 München 83, F.R. Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818808211461

Reference15 articles.

1. Transient capacitance measurements on resistive samples

2. DLTS study of the influence of plastic deformation on deep levels in n‐type CdTe

3. Characterization of CdS/CdTe thin‐film solar cells by admittance spectroscopy and deep‐level transient spectroscopy

4. Electric field enhanced emission from non‐Coulombic traps in semiconductors

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1. A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals;Semiconductors;2002-12

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