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A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals

  • Published:2002-12 Issue:12 Volume:36 Page:1341-1346
  • ISSN:1063-7826
  • Container-title:Semiconductors
  • language:en
  • Short-container-title:Semiconductors

Author:

Bobrova E. A.,Klevkov Yu. V.,Medvedev S. A.,Plotnikov A. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural defects in MBE-grown CdTe-basing heterojunctions designed for photovoltaic applications;Semiconductor Science and Technology;2021-03-17

2. DLTS Study of plastically deformed copper-doped n-type germanium;Semiconductors;2013-06

3. Formation energies of native point defects in II–VI crystals;Inorganic Materials;2012-01-08

4. Deep electron levels in undoped polycrystalline CdTe annealed in liquid Cd;Semiconductors;2011-07

5. Dislocation-induced electronic levels in semi-insulated CdTe;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-05
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