Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies-Reference-Cited by-同舟云学术

Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies

Published:2000-05 Issue:9 Volume:87 Page:4293-4302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zerrai A.,Marrakchi G.,Bremond G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373068

Reference44 articles.

1. Photorefractive properties of doped cadmium telluride

2. Photorefractivity at 1.5 μm in CdTe:V

3. Enhancement of the photorefractive gain at 13–15 μm in CdTe using alternating electric fields

4. Photorefractive response of CdTe: V under ac electric field from 1 to 1.5 μm

5. Characterization of photorefractive CdTe:V: high two-wave mixing gain with an optimum low-frequency periodic external electric field

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