Charge Transport Mechanisms in a Pb2P2Se6 Semiconductor-Reference-Cited by-同舟云学术

Charge Transport Mechanisms in a Pb2P2Se6 Semiconductor

Published:2016-09-14 Issue:10 Volume:3 Page:1877-1887
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Kostina Svetlana S.,Hanson Micah P.,Wang Peng L.,Peters John A.¹,Valverde-Chávez David A.²,Chen Pice,Cooke David G.²,Kanatzidis Mercouri G.,Wessels Bruce W.

Affiliation:

1. Department of Chemistry and Physics, Chicago State University, Chicago, Illinois 60628, United States

2. Department of Physics, McGill University, Montreal, QC H3A 0G4, Canada

Funder

Canada Foundation for Innovation

Fonds de Recherche du Québec - Nature et Technologies

Science and Technology Directorate

Natural Sciences and Engineering Research Council of Canada

Ministère du Développement Économique, de l'Innovation et de l'Exportation, Gouvernement du Québec

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.6b00396

Reference72 articles.

1. Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors

2. Crystal growth in LiGaSe2 for semiconductor radiation detection applications

3. Development of Cadmium Magnesium Telluride (Cd1−xMgxTe) for room temperature X- and gamma-ray detectors

4. Growth of PbI2single crystal by the top seed vertical zone melting method

5. Growth and characterization of CdMnTe by the vertical Bridgman technique

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