The pre-exponential factor in the conductivity of undoped hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

The pre-exponential factor in the conductivity of undoped hydrogenated amorphous silicon

Published:1985-06 Issue:6 Volume:51 Page:L57-L61
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Meaudre R.¹

Affiliation:

1. a Département de Physique des Matériaux (associé au CNRS) , Université Claude Bernard Lyon I , 43 Boulevard du 11 Novembre 1918, 69622 , Villeurbanne , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818508243145

Reference12 articles.

1. Interstitial doping of amorphous silicon

2. Conductivity, thermopower, and statistical shift in amorphous semiconductors

3. Thermoelectric power in phosphorous doped amorphous silicon

4. The random-phase model in non-crystalline systems

5. Electronic transport in hydrogenated amorphous silicon

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