Some problems encountered during the measurement of the activation energy of dark conductivity of undoped hydrogenated amorphous silicon films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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1. CMOS-compatible nanoscale gas-sensor based on field effect;physica status solidi (a);2009-03
2. Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors;Applied Physics Letters;2004-07-12
3. Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation;Philosophical Magazine Letters;1999-09
4. Midgap density of states in hydrogenated polymorphous silicon;Journal of Applied Physics;1999-07-15
5. Conduction properties ofa-Si:Hn+-i-n+structures: Analysis taking into account the effects ofn+-ispace-charge regions;Physical Review B;1992-07-15
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