Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator-Reference-Cited by-同舟云学术

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Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator

Published:2017-07-03 Issue:1 Volume:651 Page:235-242
ISSN:1542-1406
Container-title:Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals

Author:

Ding Xingwei¹²,Qin Cunping¹²,Xu Tao¹,Song Jiantao¹,Zhang Jianhua¹²,Jiang Xueyin³,Zhang Zhilin¹³

Affiliation:

1. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China

2. School of Mechatronics and Automation, Shanghai University, Shanghai, China

3. Department of Materials Science, Shanghai University, Shanghai, China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/15421406.2017.1338408

Reference19 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

3. Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress

4. Role of high-k gate insulators for oxide thin film transistors

5. A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Mg Doping on Double Channel Layer Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition Fabricated Amorphous InGaZnO Thin Film Transistors;Journal of Nanoelectronics and Optoelectronics;2021-09-01

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