Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4800172
Reference14 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
3. Present status of amorphous In–Ga–Zn–O thin-film transistors
4. Trap densities in amorphous-InGaZnO4 thin-film transistors
5. Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics
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1. Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors;IEEE Electron Device Letters;2020-12
2. Effects of electrode materials on the device performances and instabilities in amorphous InGaZnO thin film transistors;Microelectronics Reliability;2019-09
3. Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors;Solid-State Electronics;2019-02
4. Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-03
5. Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method;Solid-State Electronics;2018-01
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