Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors-Reference-Cited by-同舟云学术

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Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

Published:2014-04 Issue: Volume:592 Page:35-41
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wu Jia-Ling,Lin Han-Yu,Su Bo-Yuan,Chen Yu-Cheng,Chu Sheng-Yuan,Liu Ssu-Yin,Chang Chia-Chiang,Wu Chin-Jyi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference47 articles.

1. Negative Data Insertion Method for Suppressing Hysteresis of Polysilicon Thin-Film Transistors

2. Gap-Type a-Si TFTs for Front Light Sensing Application

3. Degradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effect

4. Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

5. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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1. Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors;ACS Applied Materials & Interfaces;2024-07-16

2. A Comparative Study of InSnZnO Transparent Thin-Film Transistors With AZO and GZO Electrodes;IEEE Transactions on Electron Devices;2024-06

3. Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation;Journal of the American Ceramic Society;2024-02-07

4. Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants;ACS Applied Electronic Materials;2023-10-26

5. Effects of Post-Annealing on the Properties of ZnO:Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square);Materials;2023-09-28

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