Negative Data Insertion Method for Suppressing Hysteresis of Polysilicon Thin-Film Transistors-Reference-Cited by-同舟云学术

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Negative Data Insertion Method for Suppressing Hysteresis of Polysilicon Thin-Film Transistors

Published:2008 Issue:7 Volume:155 Page:H491
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Chang-Yeon,Han Min-Koo,Lee Hong-Koo,Jung Sang-Hoon,Kim Chang-Dong,Kang In Byeong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. T. Shirasaki, T. Ozaki, T. Toyama, M. Takei, M. Kumagai, K. Sato, S. Shimoda, T. Tano, K. Yamamoto, K. Morimoto, et al. ,Proceedings of IDW, Vol. AMD3/OLED5-1, 275, The Society for Information Display, Niigata, Japan (2004).

2. A. Tagawa, T. Numao, and T. Ohba ,Proceedings of IDW, Vol. AMD3/OLED5-2, 279, The Society for Information Display, Niigata, Japan (2004).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors;Journal of Alloys and Compounds;2014-04

2. P-16: A Novel Shift Register for Driving AMOLED Display;SID Symposium Digest of Technical Papers;2010

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