Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/15980316.2019.1708820
Reference16 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
3. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors
4. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
5. The effect of hydrogen on the electric properties of amorphous InGaZnO with varying Zn content
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