Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/15980316.2021.1933223
Reference27 articles.
1. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics
2. Review of recent advances in flexible oxide semiconductor thin-film transistors
3. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature
4. Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors
5. Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates
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