High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters-Reference-Cited by-同舟云学术

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

Published:2024 Issue:30 Volume:12 Page:11361-11367
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Sang-Joon¹,Park Se-Ryong¹,Jeon Woo-Seok¹,Na Jong Mu²,Lim Jun Hyung³,Ham Sukhun²,Chung Yung-Bin³,Ha Tae-Jun¹^ORCID

Affiliation:

1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea

2. JI-Tech Co., Ltd., Jeollabuk-do 54002, Republic of Korea

3. Samsung Display Co., LTD., Gyeonggi-Do 17113, Republic of Korea

Abstract

High-quality indium–gallium–zinc oxide (IGZO) films synthesized by atomic layer deposition (ALD) using a single cocktail precursor based on a liquid-delivery system are demonstrated for the first time.

Funder

Ministry of Trade, Industry and Energy

Kwangwoon University

Ministry of SMEs and Startups

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01843E

Reference28 articles.

1. Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption

2. Microwave-Irradiated Metal-Oxide Thin-Film Transistors With Recessed Gate Structure and Their Applications in Logic Circuits

3. Spatial Atmospheric Atomic Layer Deposition of InxGayZnzO for Thin Film Transistors

4. Recent progress in the development of backplane thin film transistors for information displays

5. Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition