Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates
Author:
Affiliation:
1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea
2. Department of Environmental Science and Engineering, Kochi University of Technology, Kochi 782-8502, Japan
Funder
Korea Evaluation Institute of Industrial Technology
Kyung Hee University
Samsung Electronics Research and Development Program
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00544
Reference36 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Present status of amorphous In–Ga–Zn–O thin-film transistors
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4. Woven Electronic Fibers with Sensing and Display Functions for Smart Textiles
5. Load-Controlled Roll Transfer of Oxide Transistors for Stretchable Electronics
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