Infrared and Raman Study of Amorphous Silicon Carbide Thin Films Deposited by Radiofrequency Cosputtering-Reference-Cited by-同舟云学术

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Infrared and Raman Study of Amorphous Silicon Carbide Thin Films Deposited by Radiofrequency Cosputtering

Published:2014-03-05 Issue:5 Volume:47 Page:392-396
ISSN:0038-7010
Container-title:Spectroscopy Letters
language:en
Short-container-title:Spectroscopy Letters

Author:

El Khalfi Abdel-ilah,Ech-chamikh El Maati,Ijdiyaou Youssef,Azizan Mustapha,Essafti Abdelhadi,Nkhaili Lahcen,Outzourhit Abdelkader

Publisher

Informa UK Limited

Subject

Spectroscopy,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.tandfonline.com/doi/pdf/10.1080/00387010.2013.840849

Reference15 articles.

1. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

2. Organo-metallic chemical vapour deposition of silicon-rich amorphous SixC1−x refractory layers using SiEt4 as a single source

3. Properties of amorphous silicon carbide film deposited by PECVD on glass

4. Characterization of ultra-hard silicon carbide coatings deposited by RF magnetron sputtering

5. Chemical vapor co-deposition of C and SiC at moderate temperature for the synthesis of compositionally modulated SixC1-x ceramic layers

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