Organo-metallic chemical vapour deposition of silicon-rich amorphous SixC1−x refractory layers using SiEt4 as a single source
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Compositional and structural properties of amorphous SixC1−x : H alloys prepared by reactive sputtering
2. Reactive plasma deposited SixCyHz films
3. SiC coatings for first-wall candidate materials by R.F. sputtering
4. The growth of hetero-epitaxial SiC films by pyrolysis of various alkyl-silicon compounds
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2. Infrared and Raman Study of Amorphous Silicon Carbide Thin Films Deposited by Radiofrequency Cosputtering;Spectroscopy Letters;2014-03-05
3. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors;Surface and Coatings Technology;2013-01
4. Toward the Improvement of the Microstructure of Chemical Vapor Deposited Aluminum on Silicon Carbide;Journal of The Electrochemical Society;2001
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