Compositional and structural properties of amorphous SixC1−x : H alloys prepared by reactive sputtering-Reference-Cited by-同舟云学术

Compositional and structural properties of amorphous SixC1−x : H alloys prepared by reactive sputtering

Published:1979 Issue:8 Volume:50 Page:5530
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Shimada T.,Katayama Y.,Komatsubara K. F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference9 articles.

1. Substitutional doping of amorphous silicon

2. Electronic properties of substitutionally doped amorphous Si and Ge

3. Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge

4. A. Onton, H. Wieder, J. Chevallier, and C. R. Guarnieri,Amorphous and Liquid Semiconductors, edited by W. E. Spear (The Centre for Industrial Consultancy and Liaison, University of Edinburgh, Edinburgh, 1977), p. 357.

5. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique

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