Funder
Defence Research and Development Organisation
Publisher
Springer Science and Business Media LLC
Subject
General Earth and Planetary Sciences,General Physics and Astronomy,General Engineering,General Environmental Science,General Materials Science,General Chemical Engineering
Reference59 articles.
1. Morkoç H, Strite S, Gao GB, Lin ME, Sverdlov B, Burns M (1994) Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies. J Appl Phys 76:1363–1398
2. Slack GA (1964) Thermal conductivity of pure and impure silicon, silicon carbide, and diamond. J Appl Phys 35:3460–3466
3. Klumpp A, Schaber U, Offereins HL, Kühl K, Sandmaier H (1994) Amorphous silicon carbide and its application in silicon micromachining. Sens Actuators A 41:310–316
4. Saddow SE, Agarwal A (2004) Advances in silicon carbide processing and applications. Artech House, Norwood
5. Harris GL (1995) Properties of silicon carbide. INSPEC-the Institution of Electrical Engineers, London
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