Kinetic Monte Carlo simulation for the striation distribution of void defects in Czochralski silicon growth-Reference-Cited by-同舟云学术

Kinetic Monte Carlo simulation for the striation distribution of void defects in Czochralski silicon growth

Published:2010-08 Issue:9 Volume:36 Page:663-669
ISSN:0892-7022
Container-title:Molecular Simulation
language:en
Short-container-title:Molecular Simulation

Author:

Lee Sang Hun,Oh Hyun Jung,Kim Do Hyun

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modeling and Simulation,Information Systems,General Chemistry

Link

http://www.tandfonline.com/doi/pdf/10.1080/08927021003720512

Reference30 articles.

1. Winkler, R. and Behnke, G. 1994. “Gate oxide quality related to bulk properties and its influence on DRAM device performance, in Semiconductor Silicon 1994”. Edited by: Huff, H.R., Berghol, W. and Sumino, K. 973–986. Pennington, NJ: ECS.

2. The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon

3. Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals

4. Homogeneous nucleation of oxide precipitates in Czochralski‐grown silicon

5. Oxide Micro‐Precipitates in As‐Grown CZ Silicon

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3. Modeling of Defects Generation in 300 mm Silicon Monocrystals during Czochralski Growth;Japanese Journal of Applied Physics;2010-12-20