Defect formation in GaN epitaxial layers due to swift heavy ion irradiation
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420150.2011.569716
Reference14 articles.
1. Damage buildup in GaN under ion bombardment
2. Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements
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4. Mechanical Properties of GaN Single Crystals upon C Ion Irradiation: Nanoindentation Analysis;Materials;2022-02-05
5. Degradation of GaN Conductivity Under Irradiation with Swift Ions;Springer Proceedings in Physics;2020-11-28
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