Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET-Reference-Cited by-同舟云学术

Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET

Published:2020-01-20 Issue:5-6 Volume:175 Page:559-566
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Liang Xiaowen¹²³,Cui Jiangwei¹²,Zheng Qiwen¹²,Zhao Jinghao¹²³,Yu Xuefeng¹²,Sun Jing¹²,Zhang Dan¹²,Guo Qi¹²

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, People’s Republic of China

2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, People’s Republic of China

3. University of Chinese Academy of Sciences, Beijing, People’s Republic of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2019.1704757

Reference18 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Review of Silicon Carbide Power Devices and Their Applications

3. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

4. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

5. Radiation resistance of wide-bandgap semiconductor power transistors

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