Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs-Reference-Cited by-同舟云学术

Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

Author:

Gnana Prakash A. P.¹,Pradeep T. M.¹,Hegde Vinayakprasanna N.¹,Pushpa N.²,Bajpai P. K.³,Patel S. P.³,Trivedi Tarkeshwar³,Bhushan K. G.⁴

Affiliation:

1. Department of Studies in Physics, University of Mysore, Mysore, India

2. Department of PG Studies in Physics, JSS College, Mysore, India

3. National Centre for Accelerator based Research, Bilaspur, India

4. Technical Physics Division, Bhabha Atomic Research Center, Mumbai, India

Funder

DAE-BRNS, Government of India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

Reference16 articles.

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