In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance-Reference-Cited by-同舟云学术

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Published:2023-07-05 Issue:28 Volume:15 Page:33751-33762
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ho Dongil¹,Choi Sunwoo¹,Kang Hyunwoo¹,Park Byungkyu¹,Le Minh Nhut²,Park Sung Kyu³^ORCID,Kim Myung-Gil²^ORCID,Kim Choongik¹^ORCID,Facchetti Antonio⁴⁵^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbom-ro, Mapo-gu, Seoul 04107, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea

3. School of Electrical and Electronics Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea

4. Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

5. School of Materials Science and EngineeringGeorgia Institute of Technology, Atlanta, Georgia 30332, United States

Funder

National Research Foundation of Korea

Air Force Office of Scientific Research

Flexterra

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06555

Reference70 articles.

1. Low-power electronic technologies for harsh radiation environments

2. A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

3. Radiation Effects in a Post-Moore World

4. Radiation Effects in MOS Oxides

5. SpaceX—Sailing Close to the Space Weather?

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT);Solid-State Electronics;2024-05

2. Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K;Electronics;2024-04-10

3. Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors;APL Materials;2024-03-01

4. Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors;Electronics;2023-11-30

5. Effect of Tunable Sub-Source and Sub-Drain Device Behavior in Four-Terminal Operation Using Metal-Capping Thin-Film Transistors;ACS Applied Electronic Materials;2023-10-18