Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Author:

Kim Chaeyun1ORCID,Yoon Hyowon2ORCID,Kim Dong-Seok3,Seok Ogyun4

Affiliation:

1. Department of Electronic Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea

2. Department of Semiconductor System Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea

3. Korea Atomic Energy Research Institute, Gyeongju-si 38180, Republic of Korea

4. School of Electronic Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea

Abstract

TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power systems when exposed to long-term radiation conditions. We irradiated gamma-rays and protons into 1.2 kV SiC MOSFETs and evaluated the change in electrical properties to analyze the TID’s effects. As a result of the experiment, the threshold voltage (VT) and on-resistance (Ron) of 1.2 kV SiC MOSFETs decreased because positive fixed charges inside the oxide increased depending on the radiation dose of the gamma-ray and fluence of the proton irradiations. The degradation of breakdown voltage (BV) occurred owing to a change in the depletion curvature at the edge of termination regions owing to the trapping of the charge in the field’s oxide.

Publisher

MDPI AG

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