Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

Abstract

As a prominent focus in high-voltage power devices, SiC MOSFETs have broad application prospects in the aerospace field. Due to the unique characteristics of the space radiation environment, the reliability of SiC MOSFETs concerning single-event effects (SEEs) has garnered widespread attention. In this study, we employed accelerator-heavy ion irradiation experiments to study the degradation characteristics for SEEs of 1.2 kV SiC MOSFETs under different bias voltages and temperature conditions. The experimental results indicate that when the drain-source voltage (VDS) exceeds 300 V, the device leakage current increases sharply, and even single-event burnout (SEB) occurs. Furthermore, a negative gate bias (VGS) can make SEB more likely via gate damage and Poole–Frenkel emission (PF), reducing the VDS threshold of the device. The radiation degradation behavior of SiC MOSFETs at different temperatures was compared and analyzed, showing that although high temperatures can increase the safe operating voltage of VDS, they can also cause more severe latent gate damage. Through an in-depth analysis of the experimental data, the physical mechanism by which heavy ion irradiation causes gate leakage in SiC MOSFETs was explored. These research findings provide an essential basis for the reliable design of SiC MOSFETs in aerospace applications.