Heavy-ion induced single event effects and latent damages in SiC power MOSFETs-Reference-Cited by-同舟云学术

Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

Published:2022-01 Issue: Volume:128 Page:114423
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Martinella C.,Natzke P.,Alia R.G.,Kadi Y.,Niskanen K.,Rossi M.,Jaatinen J.,Kettunen H.,Tsibizov A.,Grossner U.,Javanainen A.

Funder

European Space Agency

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Status and prospects for SiC power MOSFETs;Cooper;IEEE Trans. Electron Devices,2002

2. International technology roadmap for wide band-gap power semiconductor ITRW;Ferreira,2016

3. "GaN and SiC Power Device: Market Overview," Presented at the SEMICON Europa, Munich, Germany;Rosina,2018

4. The effects of space radiation exposure on power Mosfets: a review;Shenai;IntJ. High Speed Electron. Syst.,2004

5. Space Radiation Effects on SiC Power Device Reliability;Lauenstein,2021

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions;Electronics;2024-08-27

2. Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design;IEEE Transactions on Nuclear Science;2024-08

3. Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V;Applied Physics Letters;2024-07-22

4. Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses;IEEE Transactions on Nuclear Science;2024-04

5. Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs;IEEE Transactions on Electron Devices;2024-04