THE EFFECTS OF SPACE RADIATION EXPOSURE ON POWER MOSFETS: A REVIEW-Reference-Cited by-同舟云学术

THE EFFECTS OF SPACE RADIATION EXPOSURE ON POWER MOSFETS: A REVIEW

Published:2004-06 Issue:02 Volume:14 Page:445-463
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

SHENAI K.¹,GALLOWAY K.F.²,SCHRIMPF R.D.²

Affiliation:

1. Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607, U.S.A.

2. Electrical Engineering and Computer Science, Vanderbilt University Nashville, TN 37235, U.S.A.

Abstract

Power MOSFETs are a commonly used device for many switching and power control applications. Their upper frequency limit spans a fairly broad range, from 1 MHz to 10 MHz. These devices are frequently used in spaceborne electronic systems where they encounter radiation exposure during operation. This paper reviews the current technology, its high frequency capability, the future trends for power MOSFET technology, and the degradation that the power VDMOS technology experiences in the space radiation environment.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156404002454

Reference51 articles.

1. The space radiation environment for electronics

2. The Natural Radiation Environment inside Spacecraft

3. The future of power semiconductor device technology

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