Temperature dependence of ion-induced auger electron emission from (111) silicon: I. Experiments
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420158908230311
Reference31 articles.
1. Energy dependence of silicon amorphization during ion implantation-part I
2. Amorphization processes in electron and/or ion-irradiated silicon
3. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
4. Silicon amorphization during ion implantation as a thermal phenomenon
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1. Fully discrete model of kinetic ion-induced electron emission from metal surfaces;Journal of Applied Physics;2024-02-23
2. Dynamic and static studies of Si surfaces under alkali ion irradiation;Radiation Effects and Defects in Solids;1994-12
3. Modifications of silicon surfaces by energetic alkali-metal ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-05
4. Kinetic electron emission from solid surfaces under ion bombardment;Particle Induced Electron Emission II;1992
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