Energy dependence of silicon amorphization during ion implantation-part I
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Published:1986-12
Issue:1-2
Volume:100
Page:11-17
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ISSN:0033-7579
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Container-title:Radiation Effects
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language:en
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Short-container-title:Radiation Effects
Publisher
Informa UK Limited
Subject
General Engineering
Reference22 articles.
1. Baranov, A. I. 1979.Radiation Effects in Semiconductors (in Russian), 23Novosibirsk: Nauka.
2. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
Cited by
3 articles.
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