Dual species ion implantation in GaAs-Reference-Cited by-同舟云学术

Dual species ion implantation in GaAs

Published:1980-01 Issue:1-4 Volume:48 Page:91-95
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Inada Taroh,Kato Shigeki,Ohkubo Tatsuya,Hara Tohru

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578008209235

Reference19 articles.

1. Murphy, R. A., Bozler, C. O., Donnelly, J. P., Laton, R. W., Lincoln, G. A., Sudbury, R. W., Lindley, W. T., Lowe, L. F. and Deane, M. L. 1977.Inst. Phys. Conf. Ser., Vol. No. 33b, p. 210Bristol and London: The Institute of Physics.

2. Low-noise GaAs FET's prepared by ion implantation

3. GaAs Hall-effect devices fabricated by ion-implantation technique

4. Selenium implantation in GaAs

5. Ion implantation in compound semiconductors–an approach based on solid state theory

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