GaAs Hall-effect devices fabricated by ion-implantation technique-Reference-Cited by-同舟云学术

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GaAs Hall-effect devices fabricated by ion-implantation technique

Published:1978 Issue:16 Volume:14 Page:503
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Inada Taroh,Ohkubo Tatsuya,Kato Shigeki,Kitahara Masahiro,Kanda Yozo,Hara Tohru

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19780338?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mapping of the Residual Voltage of Hall Devices Fabricated by P + Si Coimplantation on GaAs Wafers;Physica Status Solidi (a);1996-06-16

2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

3. A Hall Element Yielding a Precise Field-Linear Hall Voltage up to a High-Field Region;Japanese Journal of Applied Physics;1988-02-20

4. Integrated semiconductor magnetic field sensors;Proceedings of the IEEE;1986

5. Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs;Journal of Electronic Materials;1982-11

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