Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon-Reference-Cited by-同舟云学术

Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon

Published:1998-09 Issue:3 Volume:145 Page:213-223
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Montandon C.,Bourenkov A.,Frey L.,Pichler P.,Biersack J. P.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159808225765

Reference12 articles.

1. Clegg, J. B. and Beall, R. B. 1990.Secondary Ion Mass Spectrometry SIMS VII., Edited by: Benninghoven, A., Evans, C. A., McKeegan, K. D., Storms, H. A. and Werner, H. W. 99–102. Chichester: John Wiley & Sons.

2. Approaching the limits of high resolution depth profiling

3. SIMS Profile quantification by maximum entropy deconvolution

4. Problems in the deconvolution of SIMS depth profiles using delta-doped test structures

5. Use of model depth resolution functions for the deconvolution of depth profiling data

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