Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films-Reference-Cited by-同舟云学术

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Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films

Published:2002-08-26 Issue:9 Volume:81 Page:1609-1611
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Quevedo-Lopez M. A.,El-Bouanani M.,Kim M. J.,Gnade B. E.,Wallace R. M.,Visokay M. R.,Li-Fatou A.,Bevan M. J.,Colombo L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1502910

Reference19 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Boron Diffusion in Silicon Oxides and Oxynitrides

3. Phosphorus Diffusion in Silicon Oxide and Oxynitride Gate Dielectrics

4. Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO2 Films into Si Substrates

5. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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1. Dielectric Materials for Microelectronics;Springer Handbook of Electronic and Photonic Materials;2017

2. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography;Applied Physics Letters;2015-07-13

3. The defect chemistry of nitrogen in oxides: A review of experimental and theoretical studies;Journal of Solid State Chemistry;2013-02

4. Hafnium-Based Gate Dielectric Materials;High Permittivity Gate Dielectric Materials;2013

5. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;Progress in Materials Science;2011-07

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