Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography-Reference-Cited by-同舟云学术

Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

Published:2015-07-13 Issue:2 Volume:107 Page:023506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Bin¹,Takamizawa Hisashi¹,Shimizu Yasuo¹^ORCID,Inoue Koji¹,Nagai Yasuyoshi¹,Yano Fumiko²,Kunimune Yorinobu³,Inoue Masao⁴,Nishida Akio⁴

Affiliation:

1. The Oarai Center, Institute for Materials Research, Tohoku University, 2145-2 Narita, Oarai, Ibaraki 311-1313, Japan

2. Department of Electrical Engineering, Faculty of Engineering, Tokyo City University, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan

3. Renesas Semiconductor Manufacturing Co., Ltd., 1120 Shimokuzawa, Sagamihara, Kanagawa 252-5298, Japan

4. Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926970

Reference30 articles.

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3. (Invited) Overview of Fully Depleted SOI Technology and Circuit Benefits

4. Doping Process for 3-D N-Type Trench Transistors-2-D Cross-Sectional Doping Profiling Study

5. Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs

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