Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices-Reference-Cited by-同舟云学术

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Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

Published:2009-05 Issue:5 Volume:56 Page:920-932
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Ponton D.,Palestri P.,Esseni D.,Selmi L.,Tiebout M.,Parvais B.,Siprak D.,Knoblinger G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/8919/4976172/04783012.pdf?arnumber=4783012

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Small signal model and analog performance analysis of negative capacitance FETs;Solid-State Electronics;2021-12

4. Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier);IET Communications;2021-11-18

5. Systematic approach for IG-FinFET amplifier design using gm/Id method;Analog Integrated Circuits and Signal Processing;2021-08-04

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