Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2lenses-Reference-Cited by-同舟云学术

Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2lenses

Published:2016-08-07 Issue:27 Volume:96 Page:2919-2929
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Kang Daesung,Kim Da-Som,Kim Sun-Kyung,Song Kiyoung,Jung Myunghoon,Jeong Hwanhee,Song June-O,Seong Tae-Yeon

Funder

National Research Foundation of Korea

The Basic Science Research Program through the NRF-Korea, which is funded by the Ministry of Science, ICT, and Future Planning.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786435.2016.1219784

Reference28 articles.

1. Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate

2. Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate

3. High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques

4. Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

5. Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates

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