The degradation mechanism of GaN HP-LED under accelerated aging was analyzed by illuminance and temperature distribution-Reference-Cited by-同舟云学术

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The degradation mechanism of GaN HP-LED under accelerated aging was analyzed by illuminance and temperature distribution

Published:2017-07-03 Issue:1 Volume:651 Page:149-154
ISSN:1542-1406
Container-title:Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals

Author:

Yin Luqiao¹²,He Piaopiao¹³,Nan Tingting¹³,Zhang Jianhua¹²

Affiliation:

1. Key Laboratory of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai, China

2. School of Mechatronics and Automation, Shanghai University, Shanghai, China

3. School of Materials Science and Engineering, Shanghai University, Shanghai, China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/15421406.2017.1338470

Reference15 articles.

1. High Power LEDs - Technology Status and Market Applications

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. Light emitting diodes reliability review

4. Life of LED-Based White Light Sources

5. Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology

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