Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs
2. Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
3. High-Efficiency 1-mm$^{2}$ AlGaInP LEDs Sandwiched by ITO Omni-Directional Reflector and Current-Spreading Layer
4. Fabrication of Thin-GaN LED Structures by Au–Si Wafer Bonding
5. Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate
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1. Laser lift-off technique for applications in III-N microelectronics: A review;Microelectronic Engineering;2024-07
2. Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes;Journal of Applied Physics;2022-08-14
3. Mechanisms and Performance Analysis of GaN-Based Micro-LED Grown on Pattern Sapphire Substrate by Laser Lift-Off Process;ECS Journal of Solid State Science and Technology;2022-04-01
4. Damage-Free Transfer of GaN-Based Light-Emitting Devices and Reuse of Sapphire Substrate;ECS Journal of Solid State Science and Technology;2020-08-10
5. Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate;Crystals;2020-07-16
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