Polycrystalline silicon deposited on glass by subatmospheric-pressure chemical vapour deposition at a high rate-Reference-Cited by-同舟云学术

Polycrystalline silicon deposited on glass by subatmospheric-pressure chemical vapour deposition at a high rate

Published:2002-10 Issue:15 Volume:82 Page:1695-1701
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Münster Peter¹,Sarret Michel¹,Mohammed-Brahim Tayeb¹,Coulon Nathalie¹,Mevellec Jean-Yves²

Affiliation:

1. a Institut d'Électronique et de Télécommunications de Rennes, Unité Mixte de Recherche associée au CNRS, Université de Rennes 1 , Campus de Beaulieu,35042 Rennes Cedex, France

2. b Institut des Matériaux de Nantes, Laboratoire de Physique Cristalline, 2 rue de la Houssinière , BP 32229, 44322 Nantes Cedex 3, France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642810208220734

Reference16 articles.

1. Transport properties of polycrystalline silicon films

2. Briand , D. 1995. Vol. 1, France: Université de Rennes. PhD Thesis

3. Low Temperature Chemical Vapor Deposition of Boron Doped Silicon Films

4. High quality polysilicon by amorphous low pressure chemical vapor deposition

5. Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method

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