Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation-Reference-Cited by-同舟云学术

Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation

Published:2003-01 Issue:2 Volume:83 Page:151-163
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Yamasaki J.¹,Ohno Y.¹,Takeda S.¹,Kimura Y.²

Affiliation:

1. a Department of Physics, Graduate School of Science , Osaka University , 1-16, Machikane-yama, Toyonaka, Osaka , 560-0043 , Japan

2. b Department of Structural Biology , Biomolecular Engineering Research Institute , 6-2-3, Furuedai, Suita, Osaka , 565 , Japan

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/0141861021000026765

Reference38 articles.

1. Interstitial defects in silicon from 1–5 keV Si+ ion implantation

2. Lattice-strain field induced by{311}self-interstitial defects in silicon

3. Self-Interstitial Clustering in Crystalline Silicon

4. BOUROOIN , J. and CORBETT , J. W. Lattice Defects in Semiconductors 1974, Inrthute of Physics Conference Series. Edited by: Huntley , F. A. Vol. 23, pp.149London: Institute of Physics.

5. Growth of Precursors in Silicon Using Pseudopotential Calculations

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