[Papers] Impacts of Random Telegraph Noise with Various Time Constants and Number of States in Temporal Noise of CMOS Image Sensors

Author:

Kuroda Rihito1,Teramoto Akinobu2,Sugawa Shigetoshi12

Affiliation:

1. Graduate School of Engineering, Tohoku University

2. New Industry Creation Hatchery Center, Tohoku University

Publisher

Institute of Image Information and Television Engineers

Subject

Computer Graphics and Computer-Aided Design,Media Technology,Signal Processing

Reference48 articles.

1. 1) M.J. Kirton and M.J. Uren: "Noise in solid-state microstructures - a new perspective on individual defects, interface states and low-frequency (1/f) noise", Adv. Phys. 38, pp.367-468 (1989)

2. 2) A. Asenov, R. Balasubramaniam, A.R. Brown and J.H. Davies: "RTS Amplitudes in Decananometer MOSFETs: 3-D Simulation Study", IEEE Trans. Electron Devices, 50, pp.839-845 (Mar. 2003)

3. 3) K. Abe, S. Sugawa, S. Watabe, N. Miyamoto, A. Teramoto, Y. Kamata, K. Shibusawa, M. Toita and T. Ohmi,: "Random telegraph signal statistical analysis using a very large-scale array TEG with 1M MOSFETs", Symp. VLSI Technology, Dig. Tech. Papers, pp.210-211(2007)

4. 4) K. Abe, S. Sugawa, R. Kuroda, S. Watabe, N. Miyamoto, A. Teramoto, T. Ohmi, Y. Kamata and K. Shibusawa,: "Analysis of source follower random telegraph signal using nMOS and pMOS array TEG", in Proc. Int. Image Sensor Workshop, pp.62-65(2007)

5. 5) E. Simoen, B. Kaczer, M. Toledano-Luque and C. Claeys,: "Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare", ECS Trans. 39, pp.3-15 (2011)

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