[Papers] Impacts of Random Telegraph Noise with Various Time Constants and Number of States in Temporal Noise of CMOS Image Sensors
Author:
Affiliation:
1. Graduate School of Engineering, Tohoku University
2. New Industry Creation Hatchery Center, Tohoku University
Publisher
Institute of Image Information and Television Engineers
Subject
Computer Graphics and Computer-Aided Design,Media Technology,Signal Processing
Link
https://www.jstage.jst.go.jp/article/mta/6/3/6_171/_pdf
Reference48 articles.
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2. 2) A. Asenov, R. Balasubramaniam, A.R. Brown and J.H. Davies: "RTS Amplitudes in Decananometer MOSFETs: 3-D Simulation Study", IEEE Trans. Electron Devices, 50, pp.839-845 (Mar. 2003)
3. 3) K. Abe, S. Sugawa, S. Watabe, N. Miyamoto, A. Teramoto, Y. Kamata, K. Shibusawa, M. Toita and T. Ohmi,: "Random telegraph signal statistical analysis using a very large-scale array TEG with 1M MOSFETs", Symp. VLSI Technology, Dig. Tech. Papers, pp.210-211(2007)
4. 4) K. Abe, S. Sugawa, R. Kuroda, S. Watabe, N. Miyamoto, A. Teramoto, T. Ohmi, Y. Kamata and K. Shibusawa,: "Analysis of source follower random telegraph signal using nMOS and pMOS array TEG", in Proc. Int. Image Sensor Workshop, pp.62-65(2007)
5. 5) E. Simoen, B. Kaczer, M. Toledano-Luque and C. Claeys,: "Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare", ECS Trans. 39, pp.3-15 (2011)
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