RTS amplitudes in decananometer MOSFETs: 3-D simulation study-Reference-Cited by-同舟云学术

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RTS amplitudes in decananometer MOSFETs: 3-D simulation study

Published:2003-03 Issue:3 Volume:50 Page:839-845
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Asenov A.,Balasubramaniam R.,Brown A.R.,Davies J.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/27078/01202636.pdf?arnumber=1202636

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