Random Telegraph Signal Statistical Analysis using a Very Large-scale Array TEG with 1M MOSFETs
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339696.pdf?arnumber=4339696
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5. Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04
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