Nitrogen redistribution in SiO2 under ion bombardment
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
2. Dopant effects on the thermal stability of FUSI NiSi;Microelectronic Engineering;2008-01
3. Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-κ gate stacks;Journal of Applied Physics;2007-03
4. Ni Diffusion Studies from Fully-Silicided NiSi into Si;Electrochemical and Solid-State Letters;2006
5. Dopant penetration studies through Hf silicate;Journal of Applied Physics;2005-02-15
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