Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-κ gate stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2434808
Reference25 articles.
1. Fully Silicided Metal Gates for High-Performance CMOS Technology: A Review
2. Proceedings of the International Semiconductor Devices Research Symposium;Hou Y. T.,2003
3. Handbook of Refractory Compounds
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5. Dopant effects on the thermal stability of FUSI NiSi;Microelectronic Engineering;2008-01
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