Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry-Reference-Cited by-同舟云学术

Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry

Published:2011-05 Issue:3 Volume:29 Page:032208
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Py Matthieu,Barnes Jean-Paul,Boujamaa Rachid,Gros-Jean Michael,Nakajima Kaoru,Kimura Kenji,Roukoss Charbel,Pelissier Bernard,Gambacorti Narciso

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3589806

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