Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering-Reference-Cited by-同舟云学术

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Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering

Published:2016-01-22 Issue:7 Volume:48 Page:436-439
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Fauquier Laurent¹²,Pelissier Bernard²,Jalabert Denis³⁴,Pierre François⁵,Doloy Delphine¹,Beitia Carlos⁵,Baron Thierry²⁵

Affiliation:

1. STMicroelectronics; Crolles France

2. Université Grenoble Alpes; CNRS, CEA-LETI Minatec, LTM; Grenoble France

3. Université Grenoble Alpes; INAC-SP2M, LEMMA; Grenoble France

4. CEA, INAC-SP2M, LEMMA; Grenoble France

5. CEA-LETI, MINATEC Campus; Grenoble France

Funder

National Research Agency

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5917/fullpdf

Reference16 articles.

1. Scaling the gate dielectric: Materials, integration, and reliability

2. ITRS Roadmap for semiconductors - process integration, devices, and structures 2013

3. Hafnium and zirconium silicates for advanced gate dielectrics

4. Structural and electrical properties of HfO2 with top nitrogen incorporated layer

5. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

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